TRANSISTOR Si NPN 500mA 120V TO5

Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 120 V Collector- Emitter Voltage VCEO Max: 80 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 1.2 V Maximum DC Collector Current: 0.5 A Gain Bandwidth Product fT: 50 MHz Maximum Operating Temperature: + 150 C Mounting Style: Through Hole Package/Case: TO-39 DC Collector/Base Gain hFE Min: 20 Minimum Operating Temperature: - 65 C Packaging: Bulk Pd - Power Dissipation: 0.8 W